Semiconductor structure with crack blocking three-dimensional structure

Semiconductor structures having crack blocking three-dimensional structures are described. The semiconductor structure includes: a substrate; a functional circuit structure disposed in an area of the substrate; and a three-dimensional structure including at least one continuous trench extending vert...

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Bibliographische Detailangaben
Hauptverfasser: BUFFLET LARRY, VOIRON FREDERIC
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:Semiconductor structures having crack blocking three-dimensional structures are described. The semiconductor structure includes: a substrate; a functional circuit structure disposed in an area of the substrate; and a three-dimensional structure including at least one continuous trench extending vertically toward the bottom surface of the substrate and surrounding a region of the substrate containing the functional circuit structure. 描述了具有裂纹阻挡三维结构的半导体结构。半导体结构包括:基板;设置在基板的区域中的功能电路结构;以及包括至少一个连续沟槽的三维结构,所述至少一个连续沟槽垂直地朝向基板的底表面延伸并且围绕基板的包含功能电路结构的区域。