In-situ gas seal annealing method for improving quality of cadmium selenide thin film

The invention belongs to the field of preparation of photoelectric materials and thin-film solar cells, and discloses an in-situ gas seal annealing method for improving the quality of a cadmium selenide thin film, which comprises the following steps: by taking the cadmium selenide thin film prepared by a rapid thermal evaporation method as a treatment object, carrying out in-situ gas seal annealing on the cadmium selenide thin film in an atmosphere environment of protective gas under the condition that the pressure intensity of the atmosphere environment is 50-500Torr; in-situ annealing is carried out on the cadmium selenide thin film at the temperature of 450-600 DEG C. Compared with the cadmium selenide thin film before treatment, the annealed cadmium selenide thin film has the advantages that the number of holes is smaller, and the roughness is smaller. According to the method, the cadmium selenide thin film is subjected to in-situ thermal annealing treatment under the conditions of the specific temperatur