Vertical MSM structure photoelectric imaging system based on semi-insulating 4H-SiC substrate

The invention discloses a photoelectric imaging system with a vertical metal-semiconductor-metal (MSM) structure based on a semi-insulating 4H-SiC substrate. The device takes an Al or TiN electrode silicon carbide photoelectric detector array (1) with a vertical structure as a core, and comprises a voltage measurement module, a scanning gating control module, an operation/display module and a power supply module, thereby forming a vertical MSM structure photoelectric imaging system based on a semi-insulating 4H-SiC substrate. The system can be used for imaging an ultraviolet-to-near infrared broadband spectrum pattern, wherein one array element of an Al or TiN electrode silicon carbide photoelectric detector array with a vertical structure is a pixel point. For the whole photoelectric detector array, the scanning and gating control module is responsible for scanning and gating each pixel point, and the voltage measurement module is responsible for measuring the magnitude of current at the moment. Collected da