Semiconductor element
The invention discloses a semiconductor element. The semiconductor element comprises a substrate, a plurality of grids and a plurality of plugs. The gates are disposed on the substrate and extend in a first direction. The gates include a first gate and a second gate. Wherein the first grid electrode...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a semiconductor element. The semiconductor element comprises a substrate, a plurality of grids and a plurality of plugs. The gates are disposed on the substrate and extend in a first direction. The gates include a first gate and a second gate. Wherein the first grid electrode is far away from the first side wall of the second grid electrode and close to the second side wall of the second grid electrode, and the first extension part is arranged on the first side wall of the first grid electrode and extends towards a second direction to protrude out of the first side wall. The plugs are arranged on the substrate in parallel, the plugs comprise a first plug and a second plug, the first plug covers the first grid electrode and the first extension part, and the second plug covers the second grid electrode. Wherein the central axis of the first plug is offset from the central axis of the first gate and is offset towards the second direction.
本发明公开一种半导体元件。其中,该半导体元件包含基底、多个栅极与多个插塞。这些栅极是设置于基底上并朝 |
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