Manufacturing method of electrode for semiconductor device and semiconductor device

The invention discloses a manufacturing method of an electrode for a semiconductor device and the semiconductor device. The method comprises the steps that a welding area is arranged on an electrode body; a first indication area covering the welding area is arranged on the welding area; a first light-transmitting protection area covering the first indication area is arranged on the first indication area; and removing the first light-transmitting protection area and the first indication area. The invention also discloses a semiconductor device manufactured by adopting the method. Whether the protective layer at the welding area is completely removed or not can be judged only through a microscope, resistance testing does not need to be carried out on the welding area, and therefore testing steps are reduced, and time is saved. 本申请公开了一种半导体器件用电极的制造方法及半导体器件，所述方法包括：在电极本体上设置焊区；在所述焊区上设置覆盖所述焊区的第一指示区；在所述第一指示区上设置覆盖所述第一指示区的第一透光保护区；去除所述第一透光保护区和第一指示区。本申请还公开了一种采用所述方法而制得的半导体器件。本申请可以仅通过显微镜就能判断出焊区处的保护层是否完全去除，无需对焊区进行电阻测试，从而减少了测