Method for accurately measuring threshold voltage of SiC MOSFET

The invention discloses a method for accurately measuring the threshold voltage of a silicon carbide metal oxide semiconductor field effect transistor (SiCMOSFET). The method can be used for accurately measuring the threshold voltage of a SiCMOSFET device. Comprising the following steps: (1) giving an amplitude interval for applying reset gate voltage; (2) setting a selection standard of reset grid voltage pulse width; (3) giving an application condition of scanning grid voltage during testing; and (4) setting a selection standard of a time interval between the reset gate voltage and the test scanning gate voltage. The method comprises the following steps of: firstly, performing preliminary measurement, acquiring a threshold voltage range of a device, applying reset gate voltage according to application conditions to fill an interface state trap existing in a SiCMOSFET, controlling a difference value between the reset gate voltage and test scanning gate voltage, and determining the threshold voltage of the me