Nondestructive testing method for temperature distribution uniformity of multiple chips in SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) module

The invention discloses a nondestructive testing method for temperature distribution uniformity of multiple chips in a SiCMOSFET (silicon carbide metal oxide semiconductor field effect transistor) module, which comprises the following steps of: applying a high gate voltage to a gate of the SiCMOSFET...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CUI SHAOXIONG, GUO CHUNSHENG, DING JUEWEN, ZHAO DI, LI YUMENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!