Nondestructive testing method for temperature distribution uniformity of multiple chips in SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) module

The invention discloses a nondestructive testing method for temperature distribution uniformity of multiple chips in a SiCMOSFET (silicon carbide metal oxide semiconductor field effect transistor) module, which comprises the following steps of: applying a high gate voltage to a gate of the SiCMOSFET module, working on a blind area, and respectively applying a small current and a long-pulse-width large current to obtain a temperature sensitive parameter of the small current and a temperature sensitive parameter of the large current with self-heating; the method comprises the following steps: reversely deducing a temperature sensitive parameter containing self-heating of a large current to obtain a temperature calibration curve without self-heating, and establishing a temperature calibration curve library by combining the temperature calibration curve of a small current; based on the temperature calibration curve library, under the small current and the long-pulse-width large current, two temperature values of