Method for preparing MoS2/WS2 horizontal heterojunction polycrystalline film by one-step method
The invention relates to a method for preparing a MoS2/WS2 horizontal heterojunction polycrystalline film by a one-step method, which belongs to the field of inorganic nano semiconductor materials and comprises the following steps of: putting a corundum boat filled with sulfur powder in an upstream...
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| creator | NIE ANMIN LIU ZHONGYUAN ZHAI KUN XIANG JIANYONG TIAN YONGJUN WANG BOCHONG MOU CONGPU WEN FUSHENG XUE TIANYU KANG MENGKE |
| description | The invention relates to a method for preparing a MoS2/WS2 horizontal heterojunction polycrystalline film by a one-step method, which belongs to the field of inorganic nano semiconductor materials and comprises the following steps of: putting a corundum boat filled with sulfur powder in an upstream low-temperature area of a multi-temperature-area tubular furnace; the tungsten oxide and sodium chloride mixed powder, chromium powder and molybdenum oxide powder are sequentially and separately placed on the upstream of a long corundum boat in a downstream high-temperature area of the tubular furnace; and introducing inert protective gas, heating each temperature zone of the multi-temperature zone tubular furnace to a target temperature to evaporate the precursor, reacting at the downstream position of the multi-temperature zone tubular furnace under the driving of carrier gas, and depositing on a substrate placed at the downstream position of the long corundum boat to form the small-grain polycrystalline MoS2/WS2 |
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the tungsten oxide and sodium chloride mixed powder, chromium powder and molybdenum oxide powder are sequentially and separately placed on the upstream of a long corundum boat in a downstream high-temperature area of the tubular furnace; and introducing inert protective gas, heating each temperature zone of the multi-temperature zone tubular furnace to a target temperature to evaporate the precursor, reacting at the downstream position of the multi-temperature zone tubular furnace under the driving of carrier gas, and depositing on a substrate placed at the downstream position of the long corundum boat to form the small-grain polycrystalline MoS2/WS2</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Method for preparing MoS2/WS2 horizontal heterojunction polycrystalline film by one-step method |
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