Method for preparing MoS2/WS2 horizontal heterojunction polycrystalline film by one-step method

The invention relates to a method for preparing a MoS2/WS2 horizontal heterojunction polycrystalline film by a one-step method, which belongs to the field of inorganic nano semiconductor materials and comprises the following steps of: putting a corundum boat filled with sulfur powder in an upstream low-temperature area of a multi-temperature-area tubular furnace; the tungsten oxide and sodium chloride mixed powder, chromium powder and molybdenum oxide powder are sequentially and separately placed on the upstream of a long corundum boat in a downstream high-temperature area of the tubular furnace; and introducing inert protective gas, heating each temperature zone of the multi-temperature zone tubular furnace to a target temperature to evaporate the precursor, reacting at the downstream position of the multi-temperature zone tubular furnace under the driving of carrier gas, and depositing on a substrate placed at the downstream position of the long corundum boat to form the small-grain polycrystalline MoS2/WS2