Photoresist film-forming resin containing maleimide structure and preparation method thereof

The invention belongs to the technical field of photoresist, and particularly relates to photoresist film-forming resin containing a maleimide structure and a preparation method of the photoresist film-forming resin. A 193nm photoresist based on polymethyl methacrylate has the problems of low sensitivity, poor dry etching resistance, low substrate adhesion capacity and the like. The invention provides a photoresist film-forming resin containing a maleimide structure. The structural formula of the photoresist film-forming resin is as follows: (M1-co-M2-co-M3), wherein M1 is an acid and/or light sensitive unit, M2 is a maleimide or N-substituted maleimide unit, M3 is selected from monomers containing polar groups, and the unit number ratio of M1 to M2 to M3 is m1: m2: m3 = (3-5): (2-6): (1-3). The photoresist has good sensitivity, thermal stability, adhesivity and developability, and has good application in main body film-forming resin of 193nm photoresist and electron beam photoresist. 本发明属于光刻胶技术领域，具体涉及含马来酰亚胺结