Memristor with laminated structure and preparation method thereof

The invention discloses a memristor with a laminated structure and a preparation method of the memristor, and belongs to the field of microelectronic devices. Comprising a first electrode, a resistive layer and a second electrode, the resistive layer is arranged between the first electrode and the second electrode and is a first oxide layer/a second oxide layer/... a second oxide layer/a first oxide layer, namely, an A (BA) n type, and n is a positive integer not smaller than 2. By adopting the A (BA) n-type laminated structure memristor of the same material system, the interface potential barrier effect between multiple resistive layers is reduced, the direction and field intensity of an oxygen vacancy built-in potential field are defined and enhanced, uneven distribution of an external electric field is effectively promoted, distribution localization of the external electric field is better achieved, and the performance of the device is improved. And therefore, the formation and fracture areas of the conduc