Non-back-voltage thyristor structure and manufacturing method thereof

The invention relates to a non-back-voltage thyristor structure and a manufacturing method thereof, the non-back-voltage thyristor structure comprises an aluminum layer, an oxide layer, Si3N4, an N + region, an N-region, a P + region, a P + + region and a P-region, and the manufacturing method comprises the following steps: (1) polishing; (2) oxidizing; (3) boron diffusion; (4) removing an oxide layer; (5) preparing an aluminum layer on the unpolished surface; (6) diffusion; (7) oxidizing; (8) photoetching boron expansion; (9) photoetching a front N region; (10) phosphorus diffusion; (11) depositing a passivation layer; (12) photoetching a contact hole on the front surface; (13) making an aluminum layer on the front surface of the silicon wafer; (14) photoetching a metal front electrode; (15) thinning the back surface; (16) manufacturing an aluminum layer on the back surface, and performing aluminum alloy treatment; preparing three layers of metal, namely Cr, Ni and Sn, of back electrodes; the product applica