Semiconductor device

A semiconductor device includes an isolation region disposed on a substrate. A plurality of channels extend from the substrate and through the isolation region, the channels including an active channel and a non-active channel. A dummy fin is disposed on the isolation region and between the active channel and the non-active channel. An active gate is disposed over the active and non-active channels and contacts the isolation region. A dielectric material extends through the active gate and contacts the top of the dummy fin. The non-active channel is a non-active channel closest to the dielectric material. The long axis of the active channel extends in a first direction. The long axis of the active gate extends in the second direction. The active channel extends from the substrate along a third direction. The dielectric material is closer to the non-active channel than to the active channel. 一种半导体装置，包括在基底上设置一隔离区域。多个通道自基底延伸并穿过隔离区域，此些通道包括一有源通道和一非有源通道。一虚置鳍部设置在隔离区域上且位于有源通道和非有源通道之间。一有源栅极设置在有源通道和非有源通道的上方且接触隔离区域。一介电材