TSV (Through Silicon Via) processing method and device, electronic equipment and storage medium

The invention discloses a silicon through hole processing method and device, electronic equipment and a storage medium, and the method comprises the steps: providing a wafer, and forming a silicon through hole in the wafer; and placing the wafer in a processing cavity, introducing a xenon fluoride gas into the processing cavity, and keeping a set time period after the pressure of the xenon fluoride gas in the processing cavity reaches a set pressure. The method can greatly shorten the repair time of the scallop patterns on the side wall of the silicon through hole and remarkably reduce the repair cost. 本发明公开了一种硅通孔的处理方法、处理装置、电子设备及存储介质，其中处理方法包括：提供晶圆，所述晶圆上形成有硅通孔；将所述晶圆置于处理腔，向所述处理腔内通入氟化氙气体，并在所述处理腔内的氟化氙气体压力达到设定压力后保持设定时间段。上述方法能够极大幅度缩短硅通孔侧壁扇贝纹的修复时间并显著降低修复成本。