High modulus boron-based ceramics for semiconductor applications

Various embodiments of the present invention relate to methods, apparatuses, and systems for depositing boron-based ceramic films on a substrate. Advantageously, the boron-based ceramic films described herein can be formed at relatively low temperatures (e.g., about 600 DEG C or less) while still obtaining very high quality materials exhibiting good mechanical strength (e.g., high hardness and Young's modulus), good etch selectivity, amorphous morphology, etc. The membranes herein also have low hydrogen content, low oxygen content, and low halide content. In many cases, the film may be formed by reaction of a boron halide and a saturated or unsaturated hydrocarbon in the presence of a plasma. 本发明的各种实施方案涉及用于在衬底上沉积硼基陶瓷膜的方法、装置和系统。有利地，本文所述的硼基陶瓷膜可以在相对低的温度(例如，约600℃或更低)下形成，同时仍然获得表现出良好机械强度(例如，高硬度和杨氏模量)、良好的蚀刻选择性、非晶形态等的非常高质量的材料。这里的膜还具有低氢含量、低氧含量和低卤化物含量。在许多情况下，可以通过卤化硼和饱和或不饱和烃在等离子体存在下的反应形成膜。