Magnetoresistive random access memory structure

The invention discloses a magnetoresistive random access memory structure, comprising a substrate, a plurality of magnetoresistive random access memory cells on the substrate, the magnetoresistive random access memory cells being located in a memory region, the memory area is adjacent to the logic area, the ultra-low dielectric coefficient layer covers the magnetoresistive random access memory units, the surface part of the ultra-low dielectric coefficient layer is doped with fluorine, and the surface of the ultra-low dielectric coefficient layer at the junction of the memory area and the logic area is provided with dents. 本发明公开一种磁阻式随机存取存储器结构，包括一基底、多个磁阻式随机存取存储器单元位于该基底上，其中该些磁阻式随机存取存储器单元位于一存储器区中，该存储器区与逻辑区邻接、以及一超低介电系数层覆盖在该些磁阻式随机存取存储器单元上，其中该超低介电系数层的表面部位有掺杂氟，且位于该存储器区与该逻辑区交界处的该超低介电系数层的表面具有凹痕。