Method for forming semiconductor device
A method of forming a semiconductor device is provided, including: forming a trench in a substrate, where the trench includes a defect, and the defect protrudes from a bottom of the trench; forming a flowable material over the substrate to at least partially cover the defect; executing an etching pr...
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| creator | LIN GUANGMING ZHANG YURUI LIU YOUXUAN ZHANG YATING LEE JONGWOONG GAN KAIQUAN LI YIPING WU ZHENGXIAN LIAO ZHICHENG GUO YAHUI CHANG PEIYU |
| description | A method of forming a semiconductor device is provided, including: forming a trench in a substrate, where the trench includes a defect, and the defect protrudes from a bottom of the trench; forming a flowable material over the substrate to at least partially cover the defect; executing an etching process to reduce the height of the defect; and removing the flowable material.
提供形成半导体装置的方法，包括：在基板之中形成沟槽，其中沟槽包括缺陷，且缺陷突出于沟槽的底部；在基板之上形成可流动材料以至少部分覆盖缺陷；执行刻蚀工艺以减低缺陷的高度；以及去除可流动材料。 |
| format | Patent |
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提供形成半导体装置的方法，包括：在基板之中形成沟槽，其中沟槽包括缺陷，且缺陷突出于沟槽的底部；在基板之上形成可流动材料以至少部分覆盖缺陷；执行刻蚀工艺以减低缺陷的高度；以及去除可流动材料。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220930&DB=EPODOC&CC=CN&NR=115132646A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220930&DB=EPODOC&CC=CN&NR=115132646A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIN GUANGMING</creatorcontrib><creatorcontrib>ZHANG YURUI</creatorcontrib><creatorcontrib>LIU YOUXUAN</creatorcontrib><creatorcontrib>ZHANG YATING</creatorcontrib><creatorcontrib>LEE JONGWOONG</creatorcontrib><creatorcontrib>GAN KAIQUAN</creatorcontrib><creatorcontrib>LI YIPING</creatorcontrib><creatorcontrib>WU ZHENGXIAN</creatorcontrib><creatorcontrib>LIAO ZHICHENG</creatorcontrib><creatorcontrib>GUO YAHUI</creatorcontrib><creatorcontrib>CHANG PEIYU</creatorcontrib><title>Method for forming semiconductor device</title><description>A method of forming a semiconductor device is provided, including: forming a trench in a substrate, where the trench includes a defect, and the defect protrudes from a bottom of the trench; forming a flowable material over the substrate to at least partially cover the defect; executing an etching process to reduce the height of the defect; and removing the flowable material.
提供形成半导体装置的方法，包括：在基板之中形成沟槽，其中沟槽包括缺陷，且缺陷突出于沟槽的底部；在基板之上形成可流动材料以至少部分覆盖缺陷；执行刻蚀工艺以减低缺陷的高度；以及去除可流动材料。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD3TS3JyE9RSMsvAuHczLx0heLU3Mzk_LyU0uQSoGhKallmcioPA2taYk5xKi-U5mZQdHMNcfbQTS3Ij08tLkhMTs1LLYl39jM0NDU0NjIzMXM0JkYNAK6dKBE</recordid><startdate>20220930</startdate><enddate>20220930</enddate><creator>LIN GUANGMING</creator><creator>ZHANG YURUI</creator><creator>LIU YOUXUAN</creator><creator>ZHANG YATING</creator><creator>LEE JONGWOONG</creator><creator>GAN KAIQUAN</creator><creator>LI YIPING</creator><creator>WU ZHENGXIAN</creator><creator>LIAO ZHICHENG</creator><creator>GUO YAHUI</creator><creator>CHANG PEIYU</creator><scope>EVB</scope></search><sort><creationdate>20220930</creationdate><title>Method for forming semiconductor device</title><author>LIN GUANGMING ; ZHANG YURUI ; LIU YOUXUAN ; ZHANG YATING ; LEE JONGWOONG ; GAN KAIQUAN ; LI YIPING ; WU ZHENGXIAN ; LIAO ZHICHENG ; GUO YAHUI ; CHANG PEIYU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN115132646A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LIN GUANGMING</creatorcontrib><creatorcontrib>ZHANG YURUI</creatorcontrib><creatorcontrib>LIU YOUXUAN</creatorcontrib><creatorcontrib>ZHANG YATING</creatorcontrib><creatorcontrib>LEE JONGWOONG</creatorcontrib><creatorcontrib>GAN KAIQUAN</creatorcontrib><creatorcontrib>LI YIPING</creatorcontrib><creatorcontrib>WU ZHENGXIAN</creatorcontrib><creatorcontrib>LIAO ZHICHENG</creatorcontrib><creatorcontrib>GUO YAHUI</creatorcontrib><creatorcontrib>CHANG PEIYU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIN GUANGMING</au><au>ZHANG YURUI</au><au>LIU YOUXUAN</au><au>ZHANG YATING</au><au>LEE JONGWOONG</au><au>GAN KAIQUAN</au><au>LI YIPING</au><au>WU ZHENGXIAN</au><au>LIAO ZHICHENG</au><au>GUO YAHUI</au><au>CHANG PEIYU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for forming semiconductor device</title><date>2022-09-30</date><risdate>2022</risdate><abstract>A method of forming a semiconductor device is provided, including: forming a trench in a substrate, where the trench includes a defect, and the defect protrudes from a bottom of the trench; forming a flowable material over the substrate to at least partially cover the defect; executing an etching process to reduce the height of the defect; and removing the flowable material.
提供形成半导体装置的方法，包括：在基板之中形成沟槽，其中沟槽包括缺陷，且缺陷突出于沟槽的底部；在基板之上形成可流动材料以至少部分覆盖缺陷；执行刻蚀工艺以减低缺陷的高度；以及去除可流动材料。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Method for forming semiconductor device |
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