Method for forming semiconductor device

A method of forming a semiconductor device is provided, including: forming a trench in a substrate, where the trench includes a defect, and the defect protrudes from a bottom of the trench; forming a flowable material over the substrate to at least partially cover the defect; executing an etching process to reduce the height of the defect; and removing the flowable material. 提供形成半导体装置的方法，包括：在基板之中形成沟槽，其中沟槽包括缺陷，且缺陷突出于沟槽的底部；在基板之上形成可流动材料以至少部分覆盖缺陷；执行刻蚀工艺以减低缺陷的高度；以及去除可流动材料。