Large-current organic field effect transistor based on tunneling effect and preparation method thereof

The large-current organic field effect transistor based on the tunneling effect comprises a grid electrode, an insulating layer is arranged on the grid electrode, an active layer is arranged on the insulating layer, and a source electrode and a drain electrode are arranged on the active layer; the device is characterized in that a first modification layer is arranged between the source electrode and the active layer, and the first modification layer is used for forming a tunneling effect between the source electrode and the active layer; a second modification layer is arranged between the drain electrode and the active layer, and the second modification layer is used for forming a tunneling effect between the drain electrode and the active layer. According to the embodiment of the invention, based on the tunneling effect of quantum mechanics, the tunneling effect is generated among the active layer, the source electrode and the drain electrode by adding the modification layer among the active layer, the sourc