Three-dimensional memory and preparation and operation method and system thereof

The invention provides a three-dimensional memory, a preparation method and an operation method of the three-dimensional memory and a memory system, and the method comprises the steps: forming a laminated structure which comprises insulating layers and sacrificial layers which are alternately stacked on a substrate, and forming a plurality of holes which penetrate through the laminated structure; etching a part of the sacrificial layer close to the hole to form a first groove; forming a ferromagnetic free layer in the first groove; and sequentially forming a tunneling insulating layer and a ferromagnetic pinning layer on the inner wall of the hole. 本申请提供了一种三维存储器及其制备方法、操作方法及存储器系统，所述方法包括：在衬底上形成包括交替堆叠的绝缘层和牺牲层的叠层结构，并形成贯穿叠层结构的多个孔；对靠近孔的部分牺牲层进行刻蚀，以形成第一凹槽；在第一凹槽内形成铁磁自由层；以及在孔内壁依次形成隧穿绝缘层和铁磁钉扎层。