High-efficiency heterojunction solar cell and manufacturing method thereof

The invention discloses a high-efficiency heterojunction solar cell and a manufacturing method thereof, and the cell comprises an N-type silicon wafer, a first intrinsic amorphous silicon layer, an N-type amorphous silicon layer, a transparent conductive layer, a metal grid line layer, a second intr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ZENG QINGHUA, ZHUANG HUIHU, ZHANG JINYAN
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention discloses a high-efficiency heterojunction solar cell and a manufacturing method thereof, and the cell comprises an N-type silicon wafer, a first intrinsic amorphous silicon layer, an N-type amorphous silicon layer, a transparent conductive layer, a metal grid line layer, a second intrinsic amorphous silicon layer, a second intrinsic amorphous silicon layer, a transparent conductive layer and a metal grid line layer, the second intrinsic amorphous silicon layer, the P-type microcrystalline silicon layer, the transparent conducting layer and the metal grid line layer are sequentially arranged on the back face of the silicon wafer. Wherein the P-type microcrystalline silicon layer is formed by sequentially depositing gradually-changed boron-doped gas concentration gradients from low to high. The low doping concentration adopted in the initial film forming stage of the P-type microcrystalline silicon layer is beneficial to growth of a microcrystalline silicon film, so that the crystallization rate