High-efficiency heterojunction solar cell and manufacturing method thereof
The invention discloses a high-efficiency heterojunction solar cell and a manufacturing method thereof, and the cell comprises an N-type silicon wafer, a first intrinsic amorphous silicon layer, an N-type amorphous silicon layer, a transparent conductive layer, a metal grid line layer, a second intr...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention discloses a high-efficiency heterojunction solar cell and a manufacturing method thereof, and the cell comprises an N-type silicon wafer, a first intrinsic amorphous silicon layer, an N-type amorphous silicon layer, a transparent conductive layer, a metal grid line layer, a second intrinsic amorphous silicon layer, a second intrinsic amorphous silicon layer, a transparent conductive layer and a metal grid line layer, the second intrinsic amorphous silicon layer, the P-type microcrystalline silicon layer, the transparent conducting layer and the metal grid line layer are sequentially arranged on the back face of the silicon wafer. Wherein the P-type microcrystalline silicon layer is formed by sequentially depositing gradually-changed boron-doped gas concentration gradients from low to high. The low doping concentration adopted in the initial film forming stage of the P-type microcrystalline silicon layer is beneficial to growth of a microcrystalline silicon film, so that the crystallization rate |
---|