Integrated circuit and manufacturing method thereof

An integrated circuit and a method of manufacturing the same. The integrated circuit includes a device, a first interconnect structure disposed over the device, and a second interconnect structure positioned under the device. The first interconnect structure includes a plurality of front side metal layers. The second interconnect structure includes a plurality of backside metal layers, wherein each backside metal layer includes a metal conductor routed according to diagonal routing. In some embodiments, the backside interconnect structure may include another backside metal layer including metal conductors routed according to a hybrid Manhattan diagonal routing. Various techniques may be used to route signals between metal conductors in a backside interconnect structure and cells on one or more front side metal layers. 一种集成电路及其制造方法，集成电路包括装置、在装置之上设置的第一互连结构及在装置之下定位的第二互连结构。第一互连结构包括多个前侧金属层。第二互连结构包括多个背侧金属层，其中每个背侧金属层包括根据对角布线来布线的金属导体。在一些实施例中，背侧互连结构可以包括另一背侧金属层，此背侧金属层包括根据混合曼哈顿对角布线来布线的金属导体。各种技术可以用于在背侧互连结构中的金属导体与一或多个前侧金属