Formation method of semiconductor structure

A forming method of a semiconductor structure comprises the following steps: providing a substrate; a plurality of interlayer dielectric layers are formed on the substrate, and the method for forming one interlayer dielectric layer comprises the steps that an initial interlayer dielectric layer is formed on the substrate, and free radical fluorine is contained in the initial interlayer dielectric layer; the initial interlayer dielectric layer is subjected to defluorination treatment to form an interlayer dielectric layer, and the defluorination treatment method comprises the steps that free radical fluorine in the initial interlayer dielectric layer is diffused to the surface of the initial interlayer dielectric layer, and the free radical fluorine in the initial interlayer dielectric layer is diffused to the surface of the initial interlayer dielectric layer before and after the free radical fluorine is diffused to the surface of the initial interlayer dielectric layer; the concentration distribution of free