Plasma processing apparatus

The invention provides a plasma processing apparatus which can reduce influence on processing caused by time change of components around a substrate. The plasma processing apparatus includes: a plasma processing chamber; a plasma generation unit configured so as to be capable of generating plasma in...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LI LIFU, TSUJIMOTO HIROSHI, KUWAHARA ARIO, ABE RYOYA, ARAMAKI TAKASHI
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention provides a plasma processing apparatus which can reduce influence on processing caused by time change of components around a substrate. The plasma processing apparatus includes: a plasma processing chamber; a plasma generation unit configured so as to be capable of generating plasma in the plasma processing chamber; a substrate support part disposed in the plasma processing chamber; a first conductive ring disposed so as to surround the substrate on the substrate support part; an insulating ring disposed so as to surround the first conductive ring; and a second conductive ring disposed so as to surround the insulating ring and connected to a ground potential. 本发明提供一种等离子体处理装置,其能够降低因基片周围的部件的随时间变化而导致的对处理的影响。等离子体处理装置包括:等离子体处理腔室;构成为能够在上述等离子体处理腔室内生成等离子体的等离子体生成部;配置在上述等离子体处理腔室内的基片支承部;以包围上述基片支承部上的基片的方式配置的第一导电性环;以包围上述第一导电性环的方式配置的绝缘环;和以包围上述绝缘环的方式配置并与接地电位连接的第二导电性环。