Solid-state imaging device

A first solid-state imaging device according to an embodiment of the present disclosure includes: a first substrate including a first semiconductor substrate in which a plurality of photoelectric conversion parts included in sensor pixels are formed, and a multilayer wiring layer formed on one surface side of the first semiconductor substrate, in which the plurality of photoelectric conversion parts are embedded; at least one second substrate bonded to the first substrate, wherein the multilayer wiring layer is interposed between the first substrate and the at least one second substrate; a first wiring layer provided within the multilayer wiring layer and including a plurality of first metal thin wires formed at substantially the same first pitch; a second wiring layer laminated above the first wiring layer within the multilayer wiring layer and including a plurality of second metal thin lines formed at substantially the same second pitch between the plurality of first metal thin lines in a plan view; and a f