Ultralow temperature ALD to form high quality Si-containing films

Ultralow temperature ALD to form high quality Si-containing films

Disclosed is a method for forming a Si-containing film, such as a SiN film, by PEALD at ultra-low temperatures, such as temperatures below 250 DEG C, using trisilylamine (TSA). 披露了一种用于使用三甲硅烷基胺(TSA)在超低温(如低于250℃的温度)下通过PEALD形成含Si膜(如SiN膜)的方法。...

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Bibliographische Detailangaben
Hauptverfasser: OSHCHEPKOV IVAN, NODA NAOTO, GIRARD JEAN-MARC
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Disclosed is a method for forming a Si-containing film, such as a SiN film, by PEALD at ultra-low temperatures, such as temperatures below 250 DEG C, using trisilylamine (TSA). 披露了一种用于使用三甲硅烷基胺(TSA)在超低温(如低于250℃的温度)下通过PEALD形成含Si膜(如SiN膜)的方法。