Magnetic tunnel junction based on spin semimetal electrode, memory cell and memory device

The invention discloses a magnetic tunnel junction based on a spinning semimetal electrode, and the magnetic tunnel junction comprises a two-dimensional ferromagnetic insulating material layer, and a first two-dimensional spinning semimetal material layer and a second two-dimensional spinning semime...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SONG YANXING, CHAI CHANGCHUN, QIN YINGSHUO, LI FUXING, SONG BOQI, MENG XIANGRUI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
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