Magnetic tunnel junction based on spin semimetal electrode, memory cell and memory device

The invention discloses a magnetic tunnel junction based on a spinning semimetal electrode, and the magnetic tunnel junction comprises a two-dimensional ferromagnetic insulating material layer, and a first two-dimensional spinning semimetal material layer and a second two-dimensional spinning semimetal material layer which cover the two-dimensional ferromagnetic insulating material layer at an interval, the first two-dimensional spinning semi-metal material layer and the second two-dimensional spinning semi-metal material layer respectively form a Van der Waals heterojunction with the two-dimensional ferromagnetic insulating material layer through Van der Waals interaction, the first two-dimensional spinning semi-metal material layer is used as an incident electrode, and the second two-dimensional spinning semi-metal material layer is used as an emergent electrode; interlayer charge transfer can occur in the heterojunction, so that the contact area of the two-dimensional ferromagnetic insulating material laye