Magnetic tunnel junction based on spin semimetal electrode, memory cell and memory device

Magnetic tunnel junction based on spin semimetal electrode, memory cell and memory device

The invention discloses a magnetic tunnel junction based on a spinning semimetal electrode, and the magnetic tunnel junction comprises a two-dimensional ferromagnetic insulating material layer, and a first two-dimensional spinning semimetal material layer and a second two-dimensional spinning semime...

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Hauptverfasser: SONG YANXING, CHAI CHANGCHUN, QIN YINGSHUO, LI FUXING, SONG BOQI, MENG XIANGRUI
Format: Patent
Sprache:chi ; eng
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ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator SONG YANXING
CHAI CHANGCHUN
QIN YINGSHUO
LI FUXING
SONG BOQI
MENG XIANGRUI
description The invention discloses a magnetic tunnel junction based on a spinning semimetal electrode, and the magnetic tunnel junction comprises a two-dimensional ferromagnetic insulating material layer, and a first two-dimensional spinning semimetal material layer and a second two-dimensional spinning semimetal material layer which cover the two-dimensional ferromagnetic insulating material layer at an interval, the first two-dimensional spinning semi-metal material layer and the second two-dimensional spinning semi-metal material layer respectively form a Van der Waals heterojunction with the two-dimensional ferromagnetic insulating material layer through Van der Waals interaction, the first two-dimensional spinning semi-metal material layer is used as an incident electrode, and the second two-dimensional spinning semi-metal material layer is used as an emergent electrode; interlayer charge transfer can occur in the heterojunction, so that the contact area of the two-dimensional ferromagnetic insulating material laye
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subjects ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
title Magnetic tunnel junction based on spin semimetal electrode, memory cell and memory device
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