Insulating material for ZnO varistor and insulating treatment method
The invention discloses an insulating material for a ZnO varistor and an insulating treatment method. The insulating material for the ZnO piezoresistor comprises zinc dihydrogen phosphate, phosphoric acid, sodium molybdate, a surfactant, an emulsifier and tartaric acid. The insulating treatment meth...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses an insulating material for a ZnO varistor and an insulating treatment method. The insulating material for the ZnO piezoresistor comprises zinc dihydrogen phosphate, phosphoric acid, sodium molybdate, a surfactant, an emulsifier and tartaric acid. The insulating treatment method for the ZnO varistor comprises the following steps: 1) cleaning the ZnO varistor, soaking the ZnO varistor in an oxalic acid solution, and then drying the ZnO varistor; 2) adding water into an insulating material, and dispersing to prepare a treating fluid; and (3) soaking the ZnO varistor treated in the step (1) in a treating fluid, drying, and carrying out heat treatment. The insulating material has a good insulating effect, has the advantages of simple operation, low cost, batch treatment, high efficiency and the like when being used for surface insulating treatment of the multi-layer chip ZnO varistor, the formed surface insulating layer is uniform, good in appearance and good in insulating effect, the elect |
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