Method for forming ultraviolet radiation responsive metal oxide-containing films

A method for forming an ultraviolet (UV) radiation responsive metal oxide containing film is disclosed. The method may include depositing a UV radiation responsive metal oxide-containing film on a substrate by heating the substrate to a deposition temperature of less than 400 DEG C, contacting the s...

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Hauptverfasser: HUOTARI HANNU, MAES JAN WILLEM
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A method for forming an ultraviolet (UV) radiation responsive metal oxide containing film is disclosed. The method may include depositing a UV radiation responsive metal oxide-containing film on a substrate by heating the substrate to a deposition temperature of less than 400 DEG C, contacting the substrate with a first gas phase reactant comprising a metal component, a hydrogen component, and a carbon component, and contacting the substrate with a second gas phase reactant comprising an oxygen-containing precursor, wherein a region of the UV radiation-responsive metal oxide-containing film after UV irradiation has a first etch rate and a region of the UV radiation-responsive metal oxide-containing film not irradiated with UV radiation has a second etch rate, where the second etch rate is different than the first etch rate. 公开了一种用于形成紫外(UV)辐射响应性含金属氧化物的膜的方法。所述方法可包括:在衬底上沉积UV辐射响应性含金属氧化物的膜,做法是将衬底加热到低于400℃的沉积温度,使衬底与包括金属组分、氢组分和碳组分的第一气相反应物接触,并使衬底与包含含氧前体的第二气相反应物接触,其中UV辐射响应性含金属氧化物的膜的区域在UV照射后具有第一蚀刻速率而未用UV辐射照射的UV辐射响应性含金属