Method for integrating temperature sensor polycrystalline silicon layer on IGBT (Insulated Gate Bipolar Translator) chip

The invention provides a method for integrating a temperature sensor polycrystalline silicon layer on an IGBT (Insulated Gate Bipolar Translator) chip. The method comprises the following steps: providing a semiconductor structure; forming a second oxide layer on the upper surface of the semiconductor structure; forming a polycrystalline silicon layer on the upper surface of the second oxide layer; etching the polycrystalline silicon layer by adopting a first dry etching process until the second oxide layer is exposed so as to form a temperature sensor polycrystalline silicon layer in the active region at a preset distance from the polycrystalline silicon gate, and forming a side wall at the side wall of the polycrystalline silicon gate; and etching by adopting a second dry etching process to remove the side wall. The problem that an existing temperature sensor is poor in precision is solved. 本发明提供一种在IGBT芯片上集成温度传感器多晶硅层的方法，所述方法包括：提供一半导体结构；于所述半导体结构的上表面形成第二氧化层；于所述第二氧化层的上表面形成多晶硅层；采用第一干法刻蚀工艺刻蚀所述多晶硅层直至漏出所述第二氧化层，以于所述