Method for improving wafer warping

The invention provides a method for improving wafer warping, and the method comprises the steps: providing a wafer with a positioning mark, the wafer comprises a plurality of semiconductor device structures, the opening calibration direction of the positioning mark is a first direction, and the dire...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: WANG XIAORI, LYU CHUANJIANG, ZHOU SHUANG, YU LOUFEI, JIAO PENG
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention provides a method for improving wafer warping, and the method comprises the steps: providing a wafer with a positioning mark, the wafer comprises a plurality of semiconductor device structures, the opening calibration direction of the positioning mark is a first direction, and the direction perpendicular to the first direction is a second direction; at least one contact hole field plate is formed above the semiconductor device structure, and the contact hole field plate is in a strip shape and extends in the second direction. According to the invention, the problem that the warping degree of the existing wafer in the specific direction is greatly increased due to the stress effect of the contact hole field plate is solved. 本发明提供一种改善晶圆翘曲的方法,所述方法包括:提供一具有定位标记的晶圆,所述晶圆包括多个半导体器件结构,其中,所述定位标记的开口标定方向为第一方向,与所述第一方向垂直的方向为第二方向;于所述半导体器件结构上方形成至少一个接触孔场板,其中,所述接触孔场板呈条形并沿着所述第二方向延伸。通过本发明解决了现有的晶圆特定方向上的翘曲度因接触孔场板的应力作用而增加幅度较大的问题。