Multi-layer modification method and equipment for cutting silicon carbide wafer ingot into wafers

The invention relates to the technical field of wafer processing, in particular to a multilayer modification method and device for cutting silicon carbide wafer ingots into wafers, and the method comprises the following steps: S1, fixing the ground and polished SiC wafer ingots with the diameter less than or equal to 250mm and the thickness of 100mm on a marble platform through a porous ceramic sucker, and enabling the flatness of the platform to reach 0 level; s2, carrying out laser modification; and S3, the laser device moves upwards by the thickness of one wafer. Taking a wafer with a thickness of 770 [mu] m as an example, the laser moves up by 850 [mu] m. The depth of the focusing plane is changed into (N-1) * 850 microns, then the laser beam scans the whole focal plane, the second step is repeated, and modification of the second layer of SiC wafer ingot is completed; s4, repeating the step 3 until the modification of the N-layer SiC wafer ingot is completed; by adjusting the technical indexes of the modi