Target structure wafer obtaining method and device, equipment and storage medium

The embodiment of the invention relates to a target structure wafer obtaining method, device and equipment and a storage medium, and the method comprises the steps: obtaining the initial feature parameters of an initial structure wafer, and the initial feature parameters comprise the thickness and r...

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Bibliographische Detailangaben
Hauptverfasser:	WU JIANHONG, ZHANG XIANGPING, LIN SHICHENG, LI HAIFENG, GU ZHE'AN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	The embodiment of the invention relates to a target structure wafer obtaining method, device and equipment and a storage medium, and the method comprises the steps: obtaining the initial feature parameters of an initial structure wafer, and the initial feature parameters comprise the thickness and refractive index of a bottom anti-reflection coating; generating an initial thickness reflectivity change curve of the bottom anti-reflection coating according to the initial characteristic parameters; adjusting the initial thickness reflectivity change curve to obtain a target reflectivity change curve with waveform parameters in a corresponding threshold range; and determining a target thickness value of a bottom anti-reflection coating of the target structure wafer and target characteristic parameters of the target structure wafer according to the target reflectivity change curve. According to the target structure wafer provided by the invention, the manufacturing time and the manufacturing cost of the structure