Formation method of semiconductor device

The embodiment of the invention provides a method for forming a semiconductor device, and the method comprises the steps: providing a substrate which is provided with a stacking structure; the stacked structure comprises a to-be-formed step region, the to-be-formed step region comprises a plurality of sub-step regions, and the sub-step regions are different in height; forming a photoresist layer on the step region to be formed; and determining a photoetching scheme for the photoresist layer according to the height difference between the highest position and the lowest position of the photoresist layer in the step area to be formed. According to the forming method of the semiconductor device provided by the embodiment of the invention, the photoetching scheme of the photoresist layer is determined according to the height difference between the highest position and the lowest position of the photoresist layer, so that the pattern formed by the photoresist layer has relatively good morphology, and the yield of t