Control of process parameters for substrate polishing with substrate procession

Generating a recipe for a polishing process, including: receiving a target removal curve, the target removal curve including a target thickness to be removed for locations angularly spaced about a center of a substrate; storing a first function providing a substrate orientation with respect to the carrier head over time; storing a second function defining a polishing rate below one of the regions as one or more pressures as a function of one or more regions of the carrier head; and for each particular region of the plurality of regions, calculating a recipe defining a time-varying pressure of the particular region. Calculating the recipe includes: calculating a post-polishing expected thickness profile from a second function defining a polishing rate and a first function providing a substrate orientation with respect to the region that varies over time; and applying a minimization algorithm to reduce the difference between the expected thickness curve and the target thickness curve. 生成用于抛光工艺的配方，包括：接收目标移除曲线，所述