Plasma processing method
A plasma processing method capable of reducing process variations in batch processing of a first sheet includes: a first step in which a gas is supplied to a processing chamber; and a second step in which, after the first step, the sample is etched using plasma, the gas being a gas containing elemen...
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| creator | SUMIYA MASAHIRO NAKATSUKASA TAKANORI EITOKU HIROFUMI HIROTA KOSA |
| description | A plasma processing method capable of reducing process variations in batch processing of a first sheet includes: a first step in which a gas is supplied to a processing chamber; and a second step in which, after the first step, the sample is etched using plasma, the gas being a gas containing elemental carbon and elemental hydrogen, a gas containing elemental chlorine, or a mixed gas containing all of the gases used in the second step.
能够实现批次处理第一片中的工艺变动的减少的等离子处理方法具有：第一工序，向所述处理室供给气体；以及第二工序，在所述第一工序后，使用等离子对所述试样进行蚀刻，所述气体是含有碳元素和氢元素的气体、含有氯元素的气体或包含在所述第二工序中所用的全部气体的混合气体。 |
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能够实现批次处理第一片中的工艺变动的减少的等离子处理方法具有：第一工序，向所述处理室供给气体；以及第二工序，在所述第一工序后，使用等离子对所述试样进行蚀刻，所述气体是含有碳元素和氢元素的气体、含有氯元素的气体或包含在所述第二工序中所用的全部气体的混合气体。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220906&DB=EPODOC&CC=CN&NR=115023794A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220906&DB=EPODOC&CC=CN&NR=115023794A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SUMIYA MASAHIRO</creatorcontrib><creatorcontrib>NAKATSUKASA TAKANORI</creatorcontrib><creatorcontrib>EITOKU HIROFUMI</creatorcontrib><creatorcontrib>HIROTA KOSA</creatorcontrib><title>Plasma processing method</title><description>A plasma processing method capable of reducing process variations in batch processing of a first sheet includes: a first step in which a gas is supplied to a processing chamber; and a second step in which, after the first step, the sample is etched using plasma, the gas being a gas containing elemental carbon and elemental hydrogen, a gas containing elemental chlorine, or a mixed gas containing all of the gases used in the second step.
能够实现批次处理第一片中的工艺变动的减少的等离子处理方法具有：第一工序，向所述处理室供给气体；以及第二工序，在所述第一工序后，使用等离子对所述试样进行蚀刻，所述气体是含有碳元素和氢元素的气体、含有氯元素的气体或包含在所述第二工序中所用的全部气体的混合气体。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAIyEkszk1UKCjKT04tLs7MS1fITS3JyE_hYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhqYGRsbmliaOxsSoAQD9gSJb</recordid><startdate>20220906</startdate><enddate>20220906</enddate><creator>SUMIYA MASAHIRO</creator><creator>NAKATSUKASA TAKANORI</creator><creator>EITOKU HIROFUMI</creator><creator>HIROTA KOSA</creator><scope>EVB</scope></search><sort><creationdate>20220906</creationdate><title>Plasma processing method</title><author>SUMIYA MASAHIRO ; NAKATSUKASA TAKANORI ; EITOKU HIROFUMI ; HIROTA KOSA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN115023794A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SUMIYA MASAHIRO</creatorcontrib><creatorcontrib>NAKATSUKASA TAKANORI</creatorcontrib><creatorcontrib>EITOKU HIROFUMI</creatorcontrib><creatorcontrib>HIROTA KOSA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SUMIYA MASAHIRO</au><au>NAKATSUKASA TAKANORI</au><au>EITOKU HIROFUMI</au><au>HIROTA KOSA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Plasma processing method</title><date>2022-09-06</date><risdate>2022</risdate><abstract>A plasma processing method capable of reducing process variations in batch processing of a first sheet includes: a first step in which a gas is supplied to a processing chamber; and a second step in which, after the first step, the sample is etched using plasma, the gas being a gas containing elemental carbon and elemental hydrogen, a gas containing elemental chlorine, or a mixed gas containing all of the gases used in the second step.
能够实现批次处理第一片中的工艺变动的减少的等离子处理方法具有：第一工序，向所述处理室供给气体；以及第二工序，在所述第一工序后，使用等离子对所述试样进行蚀刻，所述气体是含有碳元素和氢元素的气体、含有氯元素的气体或包含在所述第二工序中所用的全部气体的混合气体。</abstract><oa>free_for_read</oa></addata></record> |
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| title | Plasma processing method |
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