Plasma processing method
A plasma processing method capable of reducing process variations in batch processing of a first sheet includes: a first step in which a gas is supplied to a processing chamber; and a second step in which, after the first step, the sample is etched using plasma, the gas being a gas containing elemen...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A plasma processing method capable of reducing process variations in batch processing of a first sheet includes: a first step in which a gas is supplied to a processing chamber; and a second step in which, after the first step, the sample is etched using plasma, the gas being a gas containing elemental carbon and elemental hydrogen, a gas containing elemental chlorine, or a mixed gas containing all of the gases used in the second step.
能够实现批次处理第一片中的工艺变动的减少的等离子处理方法具有:第一工序,向所述处理室供给气体;以及第二工序,在所述第一工序后,使用等离子对所述试样进行蚀刻,所述气体是含有碳元素和氢元素的气体、含有氯元素的气体或包含在所述第二工序中所用的全部气体的混合气体。 |
---|