Light-absorbing polymer and film-forming composition and antireflection film containing said polymer

本发明提供了一种辐射吸收聚合物，其具有共聚物的主链，所说共聚物包含具有二元羧酸或羧酸酐基团的重复单元及通过亚甲基或亚烷基键合至羧基的有机发色基团，其中有机发色基团通过酯化反应被键合至羧基上。辐射吸收聚合物的其余羧基可选择性地用具有活性氨基的芳族化合物进行酰胺化和/或酰亚胺化。辐射吸收聚合物显示出优良的同步覆盖度，当聚合物与必要时加入的具有氨基活性基团的芳族化合物溶解于用于抗蚀剂溶液相同的溶剂中时，可改善性能，并形成一种抗反射涂层，在烘烤涂敷于基质上的膜后，该抗反射涂层不溶于抗蚀剂溶剂中。将抗光蚀剂涂敷于抗反射涂层上，通过辐射如远UV辐射曝光。形成具有高分辨率的抗蚀剂图形，在生产集成电路元件时不受驻波的影响。 A radiation absorbing polymer is characterized by having a main chain of copolymer containing recurring units with dicarboxylic acid or carboxylic anhydride group with an organic chromophore bonded to the carboxyl group through methylene or alkylene linkage group, where the organic chromophore is bonded to the carboxyl group by esterification reaction. Residual carboxyl groups of the radiation absorbing polymer can optionally be amidized and/or imidized with an aromatic compounds having a reactive amino group. The radiation absorbing polymer shows a good step coverage when the polymer is dissolved in the same solvent as is used for resist solution together with, upon necessity, an aromatic compound with a reactive amino group to improve the characteristics and can form an antireflective coating which is insoluble in a resist solvent after baking the coated film on the substrates. Then the photoresist is applied on the antireflective coating and is exposed by radiation such as deep ultraviolet radiation. A resist pattern with high resolving power is formed, which is not affected by standing wave upon manufacturing integrated circuit elements.