METHOD OF FORMING SEMICONDUCTOR DEVICE

A method of forming a semiconductor device using annealing of a pulsed laser or furnace tube in combination with ion implantation to singulate a substrate in forming and including the same semiconductor device. In some embodiments, the method includes forming a transistor structure of a device on a first semiconductor substrate; forming a front interconnection structure on the front surface of the transistor structure; bonding a carrier substrate to the front interconnect structure; implanting ions into the first semiconductor substrate to form an implantation region of the first semiconductor substrate; and removing the first semiconductor substrate. Removing the first semiconductor substrate includes applying an annealing process to separate the implant region from a remaining region of the first semiconductor substrate. The method further includes forming a backside interconnect structure on a backside of the transistor structure. 一种形成半导体装置的方法，本揭露使用脉冲激光或炉管的退火结合离子布植，在形成半导体装置和包括与之相同的半导体装置中切割基板。在一些实施例中，此方法包括在