Preparation method of semiconductor structure, semiconductor structure, memory and storage system

The invention provides a preparation method of a semiconductor structure, the semiconductor structure, a memory and a memory system.The preparation method of the semiconductor structure comprises the steps that a first stacking structure is formed on a substrate, an isolation cutting groove and a mark cutting groove are formed through a first photomask, the isolation cutting groove and the mark cutting groove penetrate through the first stacking structure in the first direction perpendicular to the substrate and extend into the substrate, and then the isolation cutting groove and the mark cutting groove are filled with a dielectric material to form an isolation structure and a mark structure. And the process cost of preparing the semiconductor structure is effectively reduced. 本发明提供了一种半导体结构的制备方法、半导体结构、存储器和存储系统，其中，半导体结构的制备方法包括：在基底上形成第一堆叠结构，使用第一光罩形成隔离切槽和标记切槽，隔离切槽和标记切槽沿垂直于基底的第一方向穿过第一堆叠结构并延伸至基底中，之后，向隔离切槽和标记切槽中填入介质材料，以形成隔离结构和标记结构，本发明通过使用一张光罩同时形成隔离切槽和标记切槽，有效地降低了制备半导体结构的工艺成本。