InP growth rate measuring method and device

The invention provides an InP growth rate measuring method and device, and belongs to the technical field of semiconductors. The method comprises the following steps: measuring the growth rate of InP under a first growth condition by adopting an in-situ measurement method; obtaining a ratio of InP growth rate results measured by an in-situ measurement method and an XRD measurement method under a second growth condition; and calibrating the growth rate of the InP under the first growth condition, which is measured by an in-situ measurement method, by adopting the ratio, so as to obtain the growth rate of the InP under the first growth condition, which is measured by adopting an XRD (X-Ray Diffraction) measurement method. 本公开提供了一种InP生长速率测量方法及装置，属于半导体技术领域。所述方法包括：采用原位测量法测量第一生长条件下InP的生长速率；获取原位测量法和XRD测量法分别测量第二生长条件下InP生长速率结果的比值；采用所述比值对原位测量法测量的所述第一生长条件下InP的生长速率进行校准，得到采用XRD测量法测量的所述第一生长条件下InP的生长速率。