Transmission electron microscope sample irradiation device based on ion implanter and temperature control method
The invention discloses a transmission electron microscope sample irradiation device based on an ion implanter and a temperature control method, the transmission electron microscope sample irradiation device comprises an aperture partition plate, a sample table, a cooling control system and a heatin...
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| creator | PAN RONGJIAN GU JIANTAO JIANG YAN MAO JIANJUN YANG FAN ZHANG HAISHENG QIN JIANTAO WU LU WU XIAOYONG MO HUAJUN NING ZHIEN SONG XIAORONG WEN BANG ZHANG WEI |
| description | The invention discloses a transmission electron microscope sample irradiation device based on an ion implanter and a temperature control method, the transmission electron microscope sample irradiation device comprises an aperture partition plate, a sample table, a cooling control system and a heating control system, the center of the aperture partition plate is provided with a penetrating light-transmitting aperture, and a sample is fixed on an irradiation surface through a fixing assembly; the cooling control system is arranged in the sample table, and the heating control system is arranged on one side of the sample table; according to the ion beam irradiation device, the aperture partition plate is arranged in the vertical emitting direction of the ion beam, the light-transmitting aperture is arranged in the center of the aperture partition plate, the dispersed ion beam is uniformly emitted to the sample table through the light-transmitting aperture, and the sample on the irradiation surface is irradiated; |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN115019994A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN115019994A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN115019994A3</originalsourceid><addsrcrecordid>eNqNjDsKAkEQRCcxEPUO7QEEFzXYUBbFyGjzpZ0pcWB-dI-e31nwAEZV9XjU0pRROGn0qj4nQoCt0kr0VrLaXEDKsQSQF2Hnuc6aw8db0IMVjtqemW8WpwohTo4qYoFwfQvI5tQ-A0XUV3Zrs3hyUGx-uTLb62UcbjuUPEELWyTUabh33Wnf9X1_PB_-cb4DXER4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Transmission electron microscope sample irradiation device based on ion implanter and temperature control method</title><source>esp@cenet</source><creator>PAN RONGJIAN ; GU JIANTAO ; JIANG YAN ; MAO JIANJUN ; YANG FAN ; ZHANG HAISHENG ; QIN JIANTAO ; WU LU ; WU XIAOYONG ; MO HUAJUN ; NING ZHIEN ; SONG XIAORONG ; WEN BANG ; ZHANG WEI</creator><creatorcontrib>PAN RONGJIAN ; GU JIANTAO ; JIANG YAN ; MAO JIANJUN ; YANG FAN ; ZHANG HAISHENG ; QIN JIANTAO ; WU LU ; WU XIAOYONG ; MO HUAJUN ; NING ZHIEN ; SONG XIAORONG ; WEN BANG ; ZHANG WEI</creatorcontrib><description>The invention discloses a transmission electron microscope sample irradiation device based on an ion implanter and a temperature control method, the transmission electron microscope sample irradiation device comprises an aperture partition plate, a sample table, a cooling control system and a heating control system, the center of the aperture partition plate is provided with a penetrating light-transmitting aperture, and a sample is fixed on an irradiation surface through a fixing assembly; the cooling control system is arranged in the sample table, and the heating control system is arranged on one side of the sample table; according to the ion beam irradiation device, the aperture partition plate is arranged in the vertical emitting direction of the ion beam, the light-transmitting aperture is arranged in the center of the aperture partition plate, the dispersed ion beam is uniformly emitted to the sample table through the light-transmitting aperture, and the sample on the irradiation surface is irradiated;</description><language>chi ; eng</language><subject>GAMMA RAY OR X-RAY MICROSCOPES ; IRRADIATION DEVICES ; NUCLEAR ENGINEERING ; NUCLEAR PHYSICS ; PHYSICS ; TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220906&DB=EPODOC&CC=CN&NR=115019994A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220906&DB=EPODOC&CC=CN&NR=115019994A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PAN RONGJIAN</creatorcontrib><creatorcontrib>GU JIANTAO</creatorcontrib><creatorcontrib>JIANG YAN</creatorcontrib><creatorcontrib>MAO JIANJUN</creatorcontrib><creatorcontrib>YANG FAN</creatorcontrib><creatorcontrib>ZHANG HAISHENG</creatorcontrib><creatorcontrib>QIN JIANTAO</creatorcontrib><creatorcontrib>WU LU</creatorcontrib><creatorcontrib>WU XIAOYONG</creatorcontrib><creatorcontrib>MO HUAJUN</creatorcontrib><creatorcontrib>NING ZHIEN</creatorcontrib><creatorcontrib>SONG XIAORONG</creatorcontrib><creatorcontrib>WEN BANG</creatorcontrib><creatorcontrib>ZHANG WEI</creatorcontrib><title>Transmission electron microscope sample irradiation device based on ion implanter and temperature control method</title><description>The invention discloses a transmission electron microscope sample irradiation device based on an ion implanter and a temperature control method, the transmission electron microscope sample irradiation device comprises an aperture partition plate, a sample table, a cooling control system and a heating control system, the center of the aperture partition plate is provided with a penetrating light-transmitting aperture, and a sample is fixed on an irradiation surface through a fixing assembly; the cooling control system is arranged in the sample table, and the heating control system is arranged on one side of the sample table; according to the ion beam irradiation device, the aperture partition plate is arranged in the vertical emitting direction of the ion beam, the light-transmitting aperture is arranged in the center of the aperture partition plate, the dispersed ion beam is uniformly emitted to the sample table through the light-transmitting aperture, and the sample on the irradiation surface is irradiated;</description><subject>GAMMA RAY OR X-RAY MICROSCOPES</subject><subject>IRRADIATION DEVICES</subject><subject>NUCLEAR ENGINEERING</subject><subject>NUCLEAR PHYSICS</subject><subject>PHYSICS</subject><subject>TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjDsKAkEQRCcxEPUO7QEEFzXYUBbFyGjzpZ0pcWB-dI-e31nwAEZV9XjU0pRROGn0qj4nQoCt0kr0VrLaXEDKsQSQF2Hnuc6aw8db0IMVjtqemW8WpwohTo4qYoFwfQvI5tQ-A0XUV3Zrs3hyUGx-uTLb62UcbjuUPEELWyTUabh33Wnf9X1_PB_-cb4DXER4</recordid><startdate>20220906</startdate><enddate>20220906</enddate><creator>PAN RONGJIAN</creator><creator>GU JIANTAO</creator><creator>JIANG YAN</creator><creator>MAO JIANJUN</creator><creator>YANG FAN</creator><creator>ZHANG HAISHENG</creator><creator>QIN JIANTAO</creator><creator>WU LU</creator><creator>WU XIAOYONG</creator><creator>MO HUAJUN</creator><creator>NING ZHIEN</creator><creator>SONG XIAORONG</creator><creator>WEN BANG</creator><creator>ZHANG WEI</creator><scope>EVB</scope></search><sort><creationdate>20220906</creationdate><title>Transmission electron microscope sample irradiation device based on ion implanter and temperature control method</title><author>PAN RONGJIAN ; GU JIANTAO ; JIANG YAN ; MAO JIANJUN ; YANG FAN ; ZHANG HAISHENG ; QIN JIANTAO ; WU LU ; WU XIAOYONG ; MO HUAJUN ; NING ZHIEN ; SONG XIAORONG ; WEN BANG ; ZHANG WEI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN115019994A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>GAMMA RAY OR X-RAY MICROSCOPES</topic><topic>IRRADIATION DEVICES</topic><topic>NUCLEAR ENGINEERING</topic><topic>NUCLEAR PHYSICS</topic><topic>PHYSICS</topic><topic>TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR</topic><toplevel>online_resources</toplevel><creatorcontrib>PAN RONGJIAN</creatorcontrib><creatorcontrib>GU JIANTAO</creatorcontrib><creatorcontrib>JIANG YAN</creatorcontrib><creatorcontrib>MAO JIANJUN</creatorcontrib><creatorcontrib>YANG FAN</creatorcontrib><creatorcontrib>ZHANG HAISHENG</creatorcontrib><creatorcontrib>QIN JIANTAO</creatorcontrib><creatorcontrib>WU LU</creatorcontrib><creatorcontrib>WU XIAOYONG</creatorcontrib><creatorcontrib>MO HUAJUN</creatorcontrib><creatorcontrib>NING ZHIEN</creatorcontrib><creatorcontrib>SONG XIAORONG</creatorcontrib><creatorcontrib>WEN BANG</creatorcontrib><creatorcontrib>ZHANG WEI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PAN RONGJIAN</au><au>GU JIANTAO</au><au>JIANG YAN</au><au>MAO JIANJUN</au><au>YANG FAN</au><au>ZHANG HAISHENG</au><au>QIN JIANTAO</au><au>WU LU</au><au>WU XIAOYONG</au><au>MO HUAJUN</au><au>NING ZHIEN</au><au>SONG XIAORONG</au><au>WEN BANG</au><au>ZHANG WEI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Transmission electron microscope sample irradiation device based on ion implanter and temperature control method</title><date>2022-09-06</date><risdate>2022</risdate><abstract>The invention discloses a transmission electron microscope sample irradiation device based on an ion implanter and a temperature control method, the transmission electron microscope sample irradiation device comprises an aperture partition plate, a sample table, a cooling control system and a heating control system, the center of the aperture partition plate is provided with a penetrating light-transmitting aperture, and a sample is fixed on an irradiation surface through a fixing assembly; the cooling control system is arranged in the sample table, and the heating control system is arranged on one side of the sample table; according to the ion beam irradiation device, the aperture partition plate is arranged in the vertical emitting direction of the ion beam, the light-transmitting aperture is arranged in the center of the aperture partition plate, the dispersed ion beam is uniformly emitted to the sample table through the light-transmitting aperture, and the sample on the irradiation surface is irradiated;</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | GAMMA RAY OR X-RAY MICROSCOPES IRRADIATION DEVICES NUCLEAR ENGINEERING NUCLEAR PHYSICS PHYSICS TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR |
| title | Transmission electron microscope sample irradiation device based on ion implanter and temperature control method |
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