Novel silicon carbide Schottky diode

The invention discloses a novel silicon carbide Schottky diode which comprises an N + silicon carbide substrate. The primary N-silicon carbide epitaxial layer is formed on the front surface of the N + silicon carbide substrate; the P-type injection regions are symmetrically formed on the two sides of the primary N-silicon carbide epitaxial layer and are embedded into the primary N-silicon carbide epitaxial layer; the secondary N-silicon carbide epitaxial layer is formed on the primary N-silicon carbide epitaxial layer and the P-type injection region; the P + ion implantation regions are symmetrically formed on the two sides of the secondary N-silicon carbide epitaxial layer and penetrate through the secondary N-silicon carbide epitaxial layer to be communicated with the P-type implantation region; the barrier metal layer is formed on the secondary N-silicon carbide epitaxial layer and the P + ion implantation region; the metal PAD layer is formed on the barrier metal layer; and the ohmic metal layer is formed