SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

The invention provides a semiconductor device and a manufacturing method thereof. For example and without limitation, various features of this disclosure are to provide a method for manufacturing a semiconductor device and a semiconductor device resulting therefrom, the method comprising forming a f...

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Bibliographische Detailangaben
Hauptverfasser: KIM DONG-GIL, PARK, JIN-MUN, KI WON MUN, QIU HAN, KIM JIN-HAN, SWENGER, CURTIS, DU WENQIU, SON SAN NAM, BAE JAE-HAN, HAN DONG-HWA, LI JIHE, KIM DO-HYUNG
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention provides a semiconductor device and a manufacturing method thereof. For example and without limitation, various features of this disclosure are to provide a method for manufacturing a semiconductor device and a semiconductor device resulting therefrom, the method comprising forming a first layer on a carrier first side of a carrier for a first signal distribution structure; coupling a semiconductor member to a first side of the first signal distribution structure; and forming a second layer for a second signal distribution structure on a second side of the first signal distribution structure opposite the first side of the first signal distribution structure after coupling the semiconductor member; wherein the second layer comprises a first dielectric second layer and a first conductive second layer; and wherein the first conductive second layer extends into a first opening in the first dielectric second layer and towards the first signal distribution structure. 一种半导体装置和其制造方法。例如且在无限制性下,此揭露内容的各种特点