Pre-read and read threshold voltage optimization

A request to read data at a memory device is received. A first read operation is performed using a first read threshold voltage to read the data at the memory device. It is determined that the data read at the memory device using the first read threshold voltage is associated with a first unsuccessful correction of an error. In response to determining that the data read at the memory device using the first read threshold voltage is associated with the first unsuccessful correction of the error, the data read at the memory device using the first read threshold voltage is associated with the first unsuccessful correction of the error. A second read threshold voltage is stored at a register to replace a pre-read threshold voltage previously stored at the register associated with the memory device. The first pre-read threshold voltage is previously used to perform a pre-read operation at the memory device. A second read operation to read the data at the memory device is performed using the second read threshold v