Method for processing thin wafers and solar cells of crystalline silicon

Thin semiconductor wafers and components manufactured therefrom, for instance solar cells of crystalline silicon, are subjected to an increased breakage risk because of the brittle nature of the material and require a minimum thickness for the wafer in order to assure reliable handling. For improvin...

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Bibliographische Detailangaben
Hauptverfasser:	G. MARTINELLI, K.-H. EISENRITH, A. ENDROES
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	Thin semiconductor wafers and components manufactured therefrom, for instance solar cells of crystalline silicon, are subjected to an increased breakage risk because of the brittle nature of the material and require a minimum thickness for the wafer in order to assure reliable handling. For improving the handling, a semiconductor wafer is provided surface-wide with a mechanical protective layer and this semiconductor wafer is subsequently subjected to a shaping treatment.