Four CMOS (Complementary Metal Oxide Semiconductor) integrated circuit basic units capable of resisting total dose and single event lockout

The invention provides four novel circuit structures aiming at the defects of the patent of a total dose resistant CMOS (Complementary Metal Oxide Semiconductor) circuit basic transistor structure, which can realize the circuit function and resist radiation when the source electrode of an NMOS (N-channel Metal Oxide Semiconductor) transistor is not connected with a substrate, so that the problem that the source electrode of the previous invention must be connected with the substrate is solved. 本发明针对之前发明"一种抗总剂量CMOS电路基本晶体管结构"专利的缺点，提出了四种新颖的电路结构，它们可以在NMOS晶体管源极不接衬底时实现电路功能并进行抗辐照，解决之前的发明源极必须接衬底的问题。